Journal: Sensors (Basel, Switzerland)
Article Title: On the Use of Ag/AgCl Reference Electrode in Silicon Nanowire Field Effect Transistors for pH and Biosensing Applications
doi: 10.3390/s26030857
Figure Lengend Snippet: Planar pseudo-reference electrode integrated on the Si NW-based ISFET chip: ( a ) after the Ag/AgCl layer deposition; ( b ) after the 2 µm thick SU-8 layer passivation on the chip, except for the active sensing region and the contact pads, to prevent leakage current between the contacts and the solution. The BOx thickness is 200 nm. The Si NW has a thickness of 40 nm thick, width of 50 nm, and length of 10 µm. The gate oxide is 5 nm thick. The width, length, and height of the well holding the solution over the devices are 1200 µm, 1200 µm, and 2 µm, respectively. The width and length of the pseudo-Ag/AgCl reference electrode are 1000 µm and 1000 µm, respectively (thickness not described). Reprinted with permission from Reference . Copyright © 2011 Royal Society of Chemistry.
Article Snippet: A standard commercial Ag/AgCl reference electrode was used (Micro-Dri-Ref, 450 μm diameter from World Precision Instruments).
Techniques: